Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
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Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.
author list (cited authors)
Kumar, S., Graves, C. E., Strachan, J. P., Grafals, E. M., Kilcoyne, A., Tyliszczak, T., ... Williams, R. S.