Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors.
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Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.
author list (cited authors)
Kumar, S., Graves, C. E., Strachan, J. P., Grafals, E. M., Kilcoyne, A., Tyliszczak, T., ... Williams, R. S.
complete list of authors
Kumar, Suhas||Graves, Catherine E||Strachan, John Paul||Grafals, Emmanuelle Merced||Kilcoyne, Arthur L David||Tyliszczak, Tolek||Weker, Johanna Nelson||Nishi, Yoshio||Williams, R Stanley