Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors Academic Article uri icon


  • Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.

altmetric score

  • 47.948

author list (cited authors)

  • Kumar, S., Graves, C. E., Strachan, J. P., Grafals, E. M., Kilcoyne, A., Tyliszczak, T., ... Williams, R. S.

citation count

  • 67

publication date

  • February 2016