Effect of phosphorus on Ge/Si(001) island formation Academic Article

abstract

• Adding PH3 during chemical vapor deposition of Ge on Si(001) partially suppresses island formation and changes the shape of the islands that do form. A shape not previously seen in undoped layers grown by chemical vapor deposition is a large pyramid, with base edges aligned along the 110 directions and sides bounded by {111} planes near the base and {113} planes near the top. This suggests that phosphorus changes the thermodynamics of island formation. During annealing in H2, the shape of the large pyramids changes toward a multifaceted structure. The presence of PH3 during annealing of undoped islands retards coarsening, probably by decreasing surface diffusion.

authors

• Williams, R. Stanley

published proceedings

• APPLIED PHYSICS LETTERS

author list (cited authors)

• Kamins, T. I., Ohlberg, D., & Williams, R. S.

citation count

• 11

publication date

• April 2001

publisher

• AIP Publishing  Publisher

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1063/1.1361096

start page

• 2220

end page

• 2222

volume

• 78

issue

• 15

URL

• http://dx.doi.org/10.1063/1.1361096