Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl
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abstract
The intermetallic compound NiAl (50:50 at.%) has been shown to be a low-resistance ohmic contact to n-GaN and n-AlGaN. NiAl contacts on n-GaN (n=2.51017cm3) had a specific contact resistance of 9.4106cm2 upon annealing at 850C for 5 min. NiAl contacts annealed at 900C for 5 min in n-Al0.12Ga0.88N(n=2.41018cm3) and n-Al0.18Ga0.82N(n=2.71018cm3) had specific contact resistances of 2.1105cm2 and 4.7105cm2, respectively. Additionally, these contacts were subjected to long-term annealing at 600C for 100 h. On n-GaN, the contact specific contact resistance degraded from 9.4106cm2 to 5.3105cm2 after the long-term anneal. Contacts to n-Al0.18Ga0.82N showed only slight degradation with a change in contact resistance, from 4.7105cm2 to 9.2105cm2. These results demonstrate the NiAl has great promise as a stable, low-resistance contact, particularly to n-AlGaN used in high-temperature applications.
