Fabrication and characterization of gated porous silicon cathode field emission arrays Conference Paper uri icon

abstract

  • A gated field emitter array (FEA) fabrication process using a simple self-aligning gate technique is described that is compatible with the electrochemical anodization required for porous silicon (PS) formation. Specifically, a local anodization procedure has been utilized such that PS is formed in a small region about the emitter tips. The electrical characterization of the fabricated arrays is discussed.

published proceedings

  • IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST

author list (cited authors)

  • Jessing, J. R., Kim, H. R., Parker, D. L., & Weichold, M. H.

publication date

  • January 1997