High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor
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Ma, Z., Mohammadi, S., Bhattacharya, P., Katehi, L., Alterovitz, S. A., & Ponchak, G. E.
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Ma, Z||Mohammadi, S||Bhattacharya, P||Katehi, LPB||Alterovitz, SA||Ponchak, GE
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http://dx.doi.org/10.1049/el:20010514