An 8.4 GHz SiGe/Si HBT-based MMIC power amplifier Conference Paper uri icon

abstract

  • A single-stage X-band MMIC power amplifier incorporating a SiGe/Si power HBT and lumped passive components is reported. The power HBT is characterized by an f/sub max/ of 67 GHz and a BV/sub CBO/ of more than 24 V. The matching circuits were designed for maximum output power using on-chip spiral inductors and SiO MIM capacitors. Continuous wave measurements were made at 8.4 GHz, under class A operation. The power amplifier demonstrated a linear gain of 8.6 dB, output power at peak efficiency of 22.9 dBm and a saturated output power of 24.8 dBm.

name of conference

  • Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting

published proceedings

  • PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING

author list (cited authors)

  • Ma, Z. Q., Mohammadi, S., Bhattacharya, P., Katehi, L., Alterovitz, S. A., & Ponchak, G. E.

citation count

  • 6

complete list of authors

  • Ma, ZQ||Mohammadi, S||Bhattacharya, P||Katehi, LPB||Alterovitz, SA||Ponchak, GE

publication date

  • January 2002