DC to 40 QHz on-wafer, package for RF MEMS switches Conference Paper

abstract

• A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.4 dB up to 40 GHz (including a 2700 /spl mu/m long through line) and a return loss below -25 dB up to 40 GHz. Its fabrication process is designed so as to be completely compatible with the MEMS switch process, hence allowing the parallel fabrication of all the components on one wafer. The proposed on-wafer packaging approach requires no external wiring to achieve signal propagation and thus it has the potential for lower loss and better performance at higher frequencies.

name of conference

• Electrical Performance of Electronic Packaging,

authors

• Katehi, Linda

published proceedings

• ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING

author list (cited authors)

• Margomenos, A., & Katehi, L.

citation count

• 13

complete list of authors

• Margomenos, A||Katehi, LPB

publication date

• January 2002

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• 40 Engineering
• 4008 Electrical Engineering
• 4009 Electronics, Sensors And Digital Hardware
• 46 Information And Computing Sciences

Digital Object Identifier (DOI)

• 10.1109/EPEP.2002.1057890

International Standard Book Number (ISBN) 10

• 0-7803-7451-7

start page

• 91

end page

• 94

URL

• http://dx.doi.org/10.1109/epep.2002.1057890