High frequency parasitic effects for on-wafer packaging of RF MEMS switches Conference Paper

abstract

• A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.3 dB up to 40 GHz (including a 2.7 mm long through line) and a return loss below -18 dB up to 40 GHz. The inclusion of the bonding ring and the dc bias lines creates parasitic resonances. This paper presents a detailed study of the package parasitics and provides solutions that can effectively eliminate them for frequencies up to 40 GHz.

name of conference

• IEEE MTT-S International Microwave Symposium Digest, 2003

authors

• Katehi, Linda

published proceedings

• 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3

author list (cited authors)

• Margomenos, A., & Katehi, L.

citation count

• 12

complete list of authors

• Margomenos, A||Katehi, LPB

publication date

• January 2003

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium  Journal

keywords

• 0.3 Db
• 18 Db
• 40 Ghz
• Bonding Ring
• Capacitance Measurement
• Dc Bias Line
• Electrons
• High-frequency Parasitic Resonance
• Insertion Loss
• Low Voltage
• Micromachining
• Micromechanical Devices
• Microswitches
• On-wafer Packaging
• Packaging
• Radio Frequency
• Radiofrequency Microelectromechanical Systems
• Resonance
• Return Loss
• Rf Mems Switch
• Si
• Silicon Micromachining
• Switches

Digital Object Identifier (DOI)

• 10.1109/mwsym.2003.1210536

International Standard Book Number (ISBN) 10

• 0-7803-7695-1

start page

• 1931

end page

• 1934

volume

• 3

URL

• http://dx.doi.org/10.1109/mwsym.2003.1210536