The effect of low-k dielectrics on RFIC inductors Conference Paper

abstract

• This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8/spl trade/ dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8/spl trade/ deposited on high resistivity Si.

name of conference

• 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

authors

• Katehi, Linda

published proceedings

• 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

author list (cited authors)

• Jong-Hyeok Jeon, .., E. J. Inigo, .., M. T. Reiha, .., Tae-Young Choi, .., Y. Lee, .., S. Mohammadi, .., & L. P. B. Katehi.

publication date

• January 2003

keywords

• 8 Ghz
• Benzocyclobutene Dielectrics
• Conductivity
• Design
• Design Optimization
• Dielectric Loss
• Dielectric Losses
• Dielectric Materials
• Dielectric Substrates
• Dielectric Thin Films
• Fabrication
• High Quality Factor Inductors
• High Resistivity Silicon Substrate
• Inductors
• Low-k Dielectrics Effect
• Mmic
• Optimization
• Polymers
• Q Factor
• Q-factor
• Radiofrequency Integrated Circuits
• Rfic Inductors
• Self Resonant Frequency
• Silicon
• Spiral Inductors
• Su-8 Dielectrics

start page

• 53

end page

• 56 Vol.1

volume

• 1