High-Q Differential Inductors for RFIC Design Conference Paper uri icon

abstract

  • The demand for high-Q on-chip monolithic inductors is driven by the motivation to enhance high-frequency circuits for wireless applications. Differential inductors can be implemented in order to improve the quality factor (Q) of differential circuits, while demanding less on-chip area. In this paper, we introduce two differential inductors of 6-nH, fabricated in a low-cost post-process. The process uses a low-k dielectric layer (SU-8/spl trade/) prepared on a highly resistive silicon-on-insulator (SOI) wafer. The inductors have modest metal thicknesses of 1.5 /spl mu/m and 3.6 /spl mu/m and achieve differential Q values of 14.7 at 5.9 GHz and 22.7 at 4.0 GHz, respectively, for an inductance value of 6.0 nH.

name of conference

  • 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

published proceedings

  • 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

author list (cited authors)

  • Reiha, M. T., Choi, T., Jeon, J., Mohammadi, S., & Katehi, L.

citation count

  • 4

complete list of authors

  • Reiha, Michael T||Choi, Tae-Young||Jeon, Jong-Hyeok||Mohammadi, Saeed||Katehi, Linda PB

publication date

  • January 2003