The effect of low-k dielectrics on RFIC inductors Conference Paper

abstract

• This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8 dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU-8deposited on high resistivity Si.

name of conference

• 2003 33rd European Microwave Conference

authors

• Katehi, Linda

published proceedings

• 33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS

author list (cited authors)

• Jeon, J. H., Inigo, E. J., Reiha, M. T., Choi, T. Y., Lee, Y., Mohammadi, S., & Katehi, L.

citation count

• 4

complete list of authors

• Jeon, JH||Inigo, EJ||Reiha, MT||Choi, TY||Lee, Y||Mohammadi, S||Katehi, LPB

publication date

• October 2003

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Bcb
• Dielectric Loss
• Inductor
• Quality Factor
• Self Resonant Frequency
• Su-8 (tm)

Digital Object Identifier (DOI)

• 10.1109/EUMA.2003.340824

International Standard Book Number (ISBN) 10

• 1-58053-834-7

start page

• 53

end page

• 56

URL

• http://dx.doi.org/10.1109/euma.2003.340824