High-Q differential inductors for RFIC design
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abstract
The demand for high-Q on-chip monolithic inductors is driven by the motivation to enhance high-frequnecy circuits for wireless applications. Differential inductors can be implemented in order to improve the quality factor (Q) of differential circuits, while demanding less on-chip area. In this paper, we introduce two differential inductors of 6-nH, fabricated in a low-cost post-process. The process uses a low-k dielectric layer (SU-8) prepared on a highly resistive silicon-on-insulator (SOI) wafer. The inductors have modest metal thicknesses of 1.5um and 3.6um and achieve differential Q values of 14.7 at 5.9GHz and 22.7 at 4.0GHz, respectively, for an inductance value of 6.0nH.