RF MEMS switches with enhanced power-handling capabilities Academic Article

abstract

• This paper reports on the experimental and theoretical characterization of RF microelectromechanical systems (MEMS) switches for high-power applications. First, we investigate the problem of self-actuation due to high RF power and we demonstrate switches that do not self-actuate or catastrophically fail with a measured RF power of up to 5.5 W. Second, the problem of switch stiction to the down state as a function of the applied RF power is also theoretically and experimentally studied. Finally, a novel switch design with a top electrode is introduced and its advantages related to RF power-handling capabilities are presented. By applying this technology, we demonstrate hot-switching measurements with a maximum power of 0.8 W. Our results, backed by theory and measurements, illustrate that careful design can significantly improve the power-handling capabilities of RF MEMS switches.

authors

• Katehi, Linda

published proceedings

• IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

altmetric score

• 6

author list (cited authors)

• Peroulis, D., Pacheco, S. P., & Katehi, L.

citation count

• 101

complete list of authors

• Peroulis, D||Pacheco, SP||Katehi, LPB

publication date

• January 2004

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Transactions on Microwave Theory and Techniques  Journal

keywords

• Power-handling Capabilities
• Rf Microelectro-mechanical Systems (mems) Switch
• Self-actuation
• Stiction Due To High Rf Power
• Top Electrode

Digital Object Identifier (DOI)

• 10.1109/TMTT.2003.821234

start page

• 59

end page

• 68

volume

• 52

issue

• 1

URL

• http://dx.doi.org/10.1109/tmtt.2003.821234