Fabrication and accelerated hermeticity testing of an on-wafer package for RF MEMS Academic Article

abstract

• A hermetic silicon micromachined on-wafer dc-to-40-GHz packaging scheme for RF microelectromechanical systems (MEMS) switches is presented. The designed on-wafer package has a deembedded insertion loss of 0.03 dB per transition up to 40 GHz (a total measured loss of 0.3 dB including a 2.7-mm-long through line) and a return loss below -18dB up to 40 GHz. The hermeticity of the packaged is tested using an autoclave chamber with accelerated conditions of 130/spl deg/C, 2.7 atm of pressure, and 100% relative humidity. The fabrication process is designed so as to be completely compatible with the MEMS switch process, hence, allowing the parallel fabrication of all the components on a single wafer. The on-wafer proposed packaging approach requires no external wiring to achieve signal propagation and, thus, it has the potential for lower loss and better performance at higher frequencies.

authors

• Katehi, Linda

published proceedings

• IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

altmetric score

• 3

author list (cited authors)

• Margomenos, A., & Katehi, L.

citation count

• 62

complete list of authors

• Margomenos, A||Katehi, LPB

publication date

• June 2004

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Transactions on Microwave Theory and Techniques  Journal

keywords

• Hermeticity Testing
• On-wafer Packaging
• Rf Microelectrornechanical Systems (mems)
• Silicon Micromachining

Digital Object Identifier (DOI)

• 10.1109/TMTT.2004.828467

start page

• 1626

end page

• 1636

volume

• 52

issue

• 6

URL

• http://dx.doi.org/10.1109/tmtt.2004.828467