Nonlinear thermo-optic model for the characterization of optical self-heating in electro-optic semiconductors Academic Article

abstract

• A nonlinear thermo-optic model for the characterization of electro-optic semiconductor probes used to simultaneously measure electric field and temperature is presented. Optical thermal self-heating of the semiconductor is shown to be the primary limiting mechanism for temperature dynamic range, electro-optic modulation power, temperature sensitivity, temperature contrast, and temperature invasiveness. Tradeoff considerations of these parameters as a function of optical wavelength and input optical power are discussed. Optical temporal defocusing is shown to minimize the effects of nonlinear absorption. Simulation results are compared with measurements.

authors

• Katehi, Linda

published proceedings

• IEEE JOURNAL OF QUANTUM ELECTRONICS

author list (cited authors)

• Reano, R. M., Whitaker, J. F., & Katehi, L.

citation count

• 0

complete list of authors

• Reano, RM||Whitaker, JF||Katehi, LPB

publication date

• September 2004

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Journal of Quantum Electronics  Journal

keywords

• Electro-optic Effects
• Electrothermal Effects
• Opto-electronic Devices
• Semiconductor Materials

Digital Object Identifier (DOI)

• 10.1109/jqe.2004.833244

start page

• 1195

end page

• 1202

volume

• 40

issue

• 9

URL

• http://dx.doi.org/10.1109/jqe.2004.833244