Nonlinear Thermo-Optic Model for the Characterization of Optical Self-Heating in Electro-Optic Semiconductors
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A nonlinear thermo-optic model for the characterization of electro-optic semiconductor probes used to simultaneously measure electric field and temperature is presented. Optical thermal self-heating of the semiconductor is shown to be the primary limiting mechanism for temperature dynamic range, electro-optic modulation power, temperature sensitivity, temperature contrast, and temperature invasiveness. Tradeoff considerations of these parameters as a function of optical wavelength and input optical power are discussed. Optical temporal defocusing is shown to minimize the effects of nonlinear absorption. Simulation results are compared with measurements.
IEEE Journal of Quantum Electronics
author list (cited authors)
Reano, R. M., Whitaker, J. F., & Katehi, L.
complete list of authors
Reano, RM||Whitaker, JF||Katehi, LPB