High-Q Integrated 3-D Inductors and Transformers for High Frequency Applications Conference Paper

abstract

• Using a novel 3-D fabrication technology, we have demonstrated, for the first time, very high frequency and high quality factor (Q) inductors and transformers on Si substrate. On high resistivity Si, this technology achieves a quality factor of Q>60 for 1nH inductor at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6

name of conference

• 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

authors

• Katehi, Linda

published proceedings

• 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

author list (cited authors)

• Weon, D., Jeon, J., Kim, J., Mohammadi, S., & Katehi, L.

citation count

• 20

complete list of authors

• Weon, Dae-Hee||Jeon, Jong-Hyeok||Kim, Jeong-II||Mohammadi, Saeed||Katehi, Linda PB

publication date

• January 2004

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium  Journal

keywords

• 3 To 7 Ghz
• 3-d Fabrication
• Chip Scale Packaging
• Chromium
• Circuits
• Coupling Factors
• Dielectric Substrates
• Fabrication
• Gold
• High Resistivity
• High Self-resonance Frequency
• High-frequency Transformers
• High-quality Factor Integrated 3-d Inductors
• High-quality Factor Integrated 3-d Transformers
• Inductors
• Integrated Circuit Design
• Microwave Integrated Circuits
• Poser Packaging Scheme
• Q Factor
• Q-factor
• Radio Frequency
• S-parameters
• Semiconductor Fabrication
• Si
• Si Substrate
• Tensile Stress
• Transformers
• Vertical Chip

Digital Object Identifier (DOI)

• 10.1109/mwsym.2004.1339109

start page

• 877

end page

• 880

volume

• 2

URL

• http://dx.doi.org/10.1109/mwsym.2004.1339109