High Yield Reduced Process Tolerance Self-Aligned Double Mesa Process Technology for SiGe Power HBTs Conference Paper uri icon

abstract

  • Two novel high yield reduced process tolerance process technologies were developed for double mesa SiGe power HBT. DC and RF results from both 10 and 20 finger devices were presented. A reduced tolerance process is essential in the further development of MMICs using these transistors.

author list (cited authors)

  • Lee, K., Johnson, B. N., Mohammadi, S., Bhattacharya, P. K., & Katehi, L.

citation count

  • 0

publication date

  • January 2004

publisher