High-Q integrated passive elements for high frequency applications Conference Paper

abstract

• Using MEMS fabrication technology, we have demonstrated very high frequency and high quality factor (Q) varactors, inductors and transformers on a Si substrate. On high resistivity Si, this technology results in broadband analog varactors with continuous tuning range as high as 3:1 and 1 nH inductors with Q>60 at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6

name of conference

• Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

authors

• Katehi, Linda

published proceedings

• 2004 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS

author list (cited authors)

• Peroulis, D., Mohammadi, S., & Katehi, L.

citation count

• 3

complete list of authors

• Peroulis, D||Mohammadi, S||Katehi, LPB

publication date

• January 2004

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• 3 To 7 Ghz
• 8 To 16 Ghz
• Broadband Analog Varactors
• Circuit Resonance
• Circuit Tuning
• Conductivity
• Fabrication
• Frequency
• High Efficiency Transformers
• High Resistivity Silicon Substrate
• High-q Integrated Passive Elements
• Inductors
• Mems Fabrication Technology
• Micromechanical Devices
• Packaging
• Post-processing Step
• Q Factor
• Q-factor
• Si
• Thin Film Inductors
• Transformer Coupling Factor
• Transformer Self-resonance Frequency
• Transformers
• Tuning
• Varactor Tuning Range
• Varactors
• Vertical Chip/interposer Packaging
• Very High Frequency Varactors

Digital Object Identifier (DOI)

• 10.1109/smic.2004.1398158

International Standard Book Number (ISBN) 10

• 0-7803-8703-1

start page

• 25

end page

• 28

URL

• http://dx.doi.org/10.1109/smic.2004.1398158