An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs Conference Paper uri icon

abstract

  • We report an 8.5 GHz fully integrated SiGe amplifier developed using a novel fully self-aligned double mesa HBT process technology. The common-base HBT demonstrates a G/sub max/ > 14 dB and an f/sub max/ > 37 GHz. At 8.5 GHz, the small-signal gain of the amplifier is better than 4 dB, with input and output return loss of -10 dB and -5 dB, respectively. The amplifier is also shown to be unconditionally stable.

name of conference

  • Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

published proceedings

  • 2004 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS

author list (cited authors)

  • Lee, K. Y., Johnson, B. N., Mohammadi, S., Bhattacharya, P. K., Katehi, L., & Ponchak, G.

citation count

  • 0

complete list of authors

  • Lee, KY||Johnson, BN||Mohammadi, S||Bhattacharya, PK||Katehi, LPB||Ponchak, G

publication date

  • January 2004