Ultra-wideband three dimensional transitions for on-wafer packages Conference Paper

abstract

• A silicon micromachined on-wafer DC to 65 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.6 dB up to 65 GHz (less than 0.1 dB after deemhedding the losses of the feeding line) and a return lass helow -10 dB up to 70 GHz. Based on the same teehnology, a more advanced RF transition is proposed. This new vertical interconnect design offers unprecedented fleribility for the fabrication of on-wafer packaged devices, for frequencies up to 65 GHz.

name of conference

• 34th European Microwave Conference, 2004.

authors

• Katehi, Linda

published proceedings

• 34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS

author list (cited authors)

• Margomenos, A., & Katehi, L.

complete list of authors

• Margomenos, A||Katehi, LPB

publication date

• January 2004

keywords

• Fabrication
• Gallium Arsenide
• Insertion Loss
• Integrated Circuit Interconnections
• Packaging
• Radio Frequency
• Radiofrequency Microelectromechanical Systems
• Silicon
• Testing
• Ultra Wideband Technology

International Standard Book Number (ISBN) 10

• 1-58053-992-0

start page

• 645

end page

• 648

volume

• 2