High performance micro-machined inductors on CMOS substrate Conference Paper

abstract

• Using a combination of micromachining and three-dimensional (3-D) processing technologies, we have designed, fabricated, and tested inductors on CMOS grade Si substrate (10/spl sim/20 /spl Omega/-cm resistivity) which exhibit very high quality factor and high resonant frequency. A 1.2 nH inductor in this process achieves a record high quality factor of /spl sim/140 at 12GHz, with Q > 100 for frequencies between 8 to 20GHz. The technology to fabricate these inductors is based on one step deposition and electroplating of a stressed layered metal combination of Cr and Au and is fully compatible with CMOS technology.

name of conference

• IEEE MTT-S International Microwave Symposium Digest, 2005.

authors

• Katehi, Linda

published proceedings

• IEEE MTT-S International Microwave Symposium Digest, 2005.

author list (cited authors)

• Dae-Hee Weon, .., Jeong-Il Kim, .., Jong-Hyeok Jeon, .., Saeed Mohammadi, .., & L. P. B. Katehi.

publication date

• January 2005

published in

• IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium  Journal

keywords

• 12 Ghz
• 3d Processing Technology
• CMOS Integrated Circuits
• Chromium
• Cmos Process
• Cmos Substrate
• Cmos Technology
• Conductivity
• Crau
• Electroplating
• Gold
• High Quality Factor
• Inductors
• Metal Combination
• Micro-machined Inductors
• Micromachining
• One Step Deposition
• Q Factor
• Q-factor
• Resonant Frequency
• Silicon
• Testing

start page

• 4 pp.

end page

• 704