High performance micro-machined inductors on CMOS substrate Conference Paper uri icon

abstract

  • Using a combination of micromachining and three-dimensional (3-D) processing technologies, we have designed, fabricated, and tested inductors on CMOS grade Si substrate (10/spl sim/20 /spl Omega/-cm resistivity) which exhibit very high quality factor and high resonant frequency. A 1.2 nH inductor in this process achieves a record high quality factor of /spl sim/140 at 12GHz, with Q > 100 for frequencies between 8 to 20GHz. The technology to fabricate these inductors is based on one step deposition and electroplating of a stressed layered metal combination of Cr and Au and is fully compatible with CMOS technology.

name of conference

  • IEEE MTT-S International Microwave Symposium Digest, 2005.

published proceedings

  • IEEE MTT-S International Microwave Symposium Digest, 2005.

author list (cited authors)

  • Dae-Hee Weon, .., Jeong-Il Kim, .., Jong-Hyeok Jeon, .., Saeed Mohammadi, .., & L. P. B. Katehi.

publication date

  • January 1, 2005 11:11 AM