Low loss multi-wafer vertical interconnects for three dimensional integrated circuits Conference Paper uri icon

abstract

  • A low loss multi-wafer vertical interconnect appropriate for a microstrip-based circuit architecture is proposed. This transition has been designed, fabricated and measured on 100 /spl mu/m thick GaAs substrates. The measurements demonstrate insertion loss of better than 0.2dB and reflection of better than 13.6dB up to 20GHz. Using such a high performance transition allows for a more power efficient interconnect, while it enables denser packaging by stacking the substrates on top of each other, as today's technologies demand.

name of conference

  • 2005 European Microwave Conference

published proceedings

  • 2005 European Microwave Conference

author list (cited authors)

  • R. R. Lahiji, .., K. J. Herrick, .., S. Mohammadi, .., & L. P. B. Katehi.

publication date

  • January 2005