Wideband Si micromachined transitions for RF wafer-scale packages
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abstract
Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and FGC-to-FGC transitions are presented
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2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems