Wideband Si micromachined transitions for RF wafer-scale packages Conference Paper uri icon

abstract

  • Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and FGC-to-FGC transitions are presented

name of conference

  • 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

published proceedings

  • 2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS

author list (cited authors)

  • Margomenos, A., Lee, Y., & Katehi, L.

citation count

  • 6

complete list of authors

  • Margomenos, Alexandros||Lee, Yongshik||Katehi, Linda PB

publication date

  • January 2007