Small- and large-signal operation of X-band CE and CBSiGe Si power HBT's Conference Paper uri icon

abstract

  • Common-emitter (CE) and common-base (CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE devices show f/sub max/ of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and P/sub out/ at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.

author list (cited authors)

  • Rieh, J. S., Lu, L. H., Ma, Z. Q., Liu, X. F., Katehi, L., Bhattacharya, P., & Croke, E. T.

publication date

  • January 1, 1999 11:11 AM