Small- and large-signal operation of X-band CE and CBSiGe Si power HBT's Conference Paper

abstract

• Common-emitter (CE) and common-base (CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE devices show f/sub max/ of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and P/sub out/ at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.

name of conference

• 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)

authors

• Katehi, Linda

published proceedings

• 1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4

author list (cited authors)

• Rieh, J. S., Lu, L. H., Ma, Z. Q., Liu, X. F., Katehi, L., Bhattacharya, P., & Croke, E. T.

complete list of authors

• Rieh, JS||Lu, LH||Ma, ZQ||Liu, XF||Katehi, LPB||Bhattacharya, P||Croke, ET

publication date

• January 1999

published in

• IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium  Journal

keywords

• 17.5 Percent
• 20 Ghz
• 28 Ghz
• 34.9 Percent
• 8 Ghz
• Class A Operation
• Common-base Configuration
• Common-emitter Configuration
• Cw Mode
• Elemental Semiconductors
• Fabrication
• Fingers
• Frequency Response
• Ge-Si Alloys
• Germanium Silicon Alloys
• Heterojunction Bipolar Transistors
• Large-signal Operation
• Microwave Bipolar Transistors
• Microwave Devices
• Microwave Power Transistors
• Molecular Beam Epitaxial Growth
• Multifinger Type
• Power Bipolar Transistors
• Power Heterojunction Bipolar Transistors
• Semiconductor Materials
• Shf
• Sige-si
• Sige/si Power Hbt
• Silicon
• Silicon Germanium
• Small-signal Operation
• Thermal Conductivity
• Thermal Resistance
• X-band Operation

International Standard Book Number (ISBN) 10

• 0-7803-5135-5

start page

• 1191

end page

• 1194

volume

• 3