The Effects of Si-Micromachined On-Wafer Packaging on the Performance of K-Band Circuits Conference Paper

abstract

• This paper presents results from a study on the effect of Si-micromachined packaging on the performance of K-band circuits. Components inclduding interconnects and stubs have been fabricated using finite ground coplanar (FGC) transmission lines and results indicate that nonmetalized air cavities introduce fewer parasitics as compared to metalized air cavities. Flip-chip devices have been incorporated to design a packaged 3-stage low noise amplifier (LNA). The performance of flip-chip Indium Phosphide (InP) high electron mobility trnsistors (HEMTs) in the host substrate environment is measured and used to design the packaged LNA for desired performance.

name of conference

• 29th European Microwave Conference, 1999

authors

• Katehi, Linda

published proceedings

• 29th European Microwave Conference, 1999

author list (cited authors)

• Henderson, R. M., Schwarz, T. A., Robertson, S. V., Katehi, L., Case, M., & Matloubian, M.

citation count

• 0

complete list of authors

• Henderson, Rashaunda M||Schwarz, Thomas A||Robertson, Stephen V||Katehi, Linda PB||Case, Michael||Matloubian, Mehran

publication date

• October 1999

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Circuit Noise
• Coplanar Transmission Lines
• Distributed Parameter Circuits
• Electron Mobility
• Indium Phosphide
• Integrated Circuit Interconnections
• K-band
• Low-noise Amplifiers
• Packaging
• Working Environment Noise

Digital Object Identifier (DOI)

• 10.1109/euma.1999.338476

start page

• 398

end page

• 401

volume

• 3

URL

• http://dx.doi.org/10.1109/euma.1999.338476