A high-power W-band monolithic FGC doubler Academic Article

abstract

• This paper describes the realization of a high output power W-band planar monolithic doubler using finite ground coplanar lines. The design of this doubler is based on two parallel pairs of varactor Schottky diodes fabricated on GaAs substrate, Measured results indicate a 12.5% efficiency at 74 GHz, a minimum 3-dB bandwidth of 12.5%, a return loss of -15 dB and a maximum output power of 115 mW. To the authors' knowledge, this is the highest output power level reported for a planar/monolithic W-band doubler.

authors

• Katehi, Linda

published proceedings

• IEEE MICROWAVE AND GUIDED WAVE LETTERS

author list (cited authors)

• Papapolymerou, J., East, J., & Katehi, L.

citation count

• 5

complete list of authors

• Papapolymerou, J||East, J||Katehi, LPB

publication date

• May 2000

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Microwave and Wireless Components Letters  Journal

keywords

• 115 Mw
• 12.5 Percent
• 15 Db
• 3-db Bandwidth
• 74 Ghz
• Circuit Optimization
• Coplanar Transmission Lines
• Doping
• Finite Ground Coplanar Lines
• Frequency Multipliers
• Gaas
• Impedance
• Maximum Output Power
• Millimetre Wave Frequency Convertors
• Mmic Frequency Convertors
• Mmics
• Monolithic Fgc Doubler
• Parallel Pairs
• Power Generation
• Q Factor
• Radio Frequency
• Return Loss
• Schottky Diodes
• Tuning
• Varactor Schottky Diodes
• Varactors
• W-band

Digital Object Identifier (DOI)

• 10.1109/75.850375

start page

• 195

end page

• 197

volume

• 10

issue

• 5

URL

• http://dx.doi.org/10.1109/75.850375