High-Q X-band and K-band micromachined spiral inductors for use in Si-based integrated circuits Conference Paper uri icon

abstract

  • A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters are measured to characterize the performance of the inductors. With an etch depth of 20 /spl mu/m, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is compatible with SiGe-Si HBT technology, and the spiral inductors are especially suitable for Si-based monolithic microwave integrated circuit (MMIC) applications.

name of conference

  • 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)

published proceedings

  • 2000 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS

author list (cited authors)

  • Lu, L. H., Ponchak, G. E., Bhattacharya, P., & Katehi, L.

citation count

  • 16

complete list of authors

  • Lu, LH||Ponchak, GE||Bhattacharya, P||Katehi, LPB

publication date

  • January 2000