Microwave noise of Si/Si/sub 0.6/Ge/sub 0.4/ heterojunction bipolar transistors Conference Paper uri icon

abstract

  • The microwave noise of Si/SiGe HBTs was characterized wid modeled using a highfrequency T-ecluivillent noise circuit model. A 6 finger 2x15 pn2 HBT showed a minimum noise riigu1.e of 2.2GdB with an associated gain of 12.7d8, measured at 8 GHz under Ic=14mA and Vc,,=3V bias condition. Bias, frequency and H3T geometry dependent noise measurements were also perrormcd. It was found that the 6 fingcr 2x15 binz HBT has thc bcst noisc performance among the characterized devices. Moreover, it was rcvcalcd [hilt minimum noise figure reaches a minimum at R medium collcctor currcnt. Finally, a s implc all physical h igh-frequenc y T-equivalent noise model was extracted from the measured Sparameters aiid noise data and was used for the study of noise dependence on different HBT equivalent circuit parameters.

name of conference

  • 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)

published proceedings

  • 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)

author list (cited authors)

  • Mohammadi, S., Lu, L., Ma, Z., Katehi, L., Bhattacharya, P. K., Ponchak, G. E., & Croke, E. T.

citation count

  • 0

complete list of authors

  • Mohammadi, S||Lu, L-H||Ma, Z||Katehi, LPB||Bhattacharya, PK||Ponchak, GE||Croke, ET

publication date

  • January 2000