Microwave noise of Si/Si0.6Ge0.4 heterojunction bipolar transistors Conference Paper uri icon

abstract

  • The microwave noise of Si/SiGe HBTs was characterized and modeled using a high-frequency T-equivalent noise circuit model. A 6 finger 2/spl times/15 /spl mu/m/sup 2/ HBT showed a minimum noise figure of 2.26 dB with an associated gain of 12.7 dB, measured at 8 GHz under I/sub c/=14 mA and V/sub CE/=3V bias condition. Bias, frequency and HBT geometry dependent noise measurements were also performed. It was found that the 6 finger 2/spl times/15 /spl mu/m/sup 2/ HBT has the best noise performance among the characterized devices. Moreover, it was revealed that minimum noise figure reaches a minimum at a medium collector current. Finally, a simple all physical high-frequency T-equivalent noise model was extracted from the measured S-parameters and noise data and was used for the study of noise dependence on different HBT equivalent circuit parameters.

name of conference

  • 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)

published proceedings

  • 2000 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS

author list (cited authors)

  • Mohammadi, S., Lu, L. H., Ma, Z., Katehi, L., Bhattacharya, P. K., Ponchak, G. E., & Croke, E. T.

citation count

  • 0

complete list of authors

  • Mohammadi, S||Lu, LH||Ma, Z||Katehi, LPB||Bhattacharya, PK||Ponchak, GE||Croke, ET

publication date

  • January 2000