Multilevel finite ground coplanar line transitions for high-density packaging using silicon micromachining Conference Paper

abstract

• A 3D photolithographic technique is exploited to produce finite ground coplanar (FGC) transmission lines that transition into and out of silicon micromachined cavities. Each transition was found to introduce an average loss of less than 0.08 dB across the 2-40 GHz range for a cavity depth of 110 /spl mu/m. The demonstration of this technology is a significant step toward fully realizing the circuit packaging capabilities of micromachined silicon and offers the possibility of novel, broadband vertical transitions.

name of conference

• 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

authors

• Katehi, Linda

published proceedings

• 2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3

author list (cited authors)

• Becker, J. P., & Katehi, L.

citation count

• 11

complete list of authors

• Becker, JP||Katehi, LPB

publication date

• January 2000

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium  Journal

keywords

• 110 Micron
• 2 To 40 Ghz
• 3d Photolithographic Technique
• Average Loss
• Broadband Vertical Transitions
• Cavity Depth
• Chemicals
• Circuit Packaging Capabilities
• Coplanar Transmission Lines
• Costs
• Electromagnetic Heating
• Elemental Semiconductors
• Fabrication
• Flexible Printed Circuits
• High-density Packaging
• Integrated Circuit Packaging
• Micromachined Cavities
• Micromachining
• Microwave Circuits
• Mimic
• Mmic
• Multilevel Finite Ground Coplanar Line Transitions
• Packaging
• Photolithography
• Resists
• Si
• Silicon

Digital Object Identifier (DOI)

• 10.1109/mwsym.2000.860991

International Standard Book Number (ISBN) 10

• 0-7803-5687-X

start page

• 303

end page

• 306

volume

• 1

URL

• http://dx.doi.org/10.1109/mwsym.2000.860991