RF W-band wafer-to-wafer transition Conference Paper uri icon

abstract

  • Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides on vertically stacked silicon wafers. Loss of approximately 0.1 dB is measured for this compact, packaged transition at W-band.

name of conference

  • 2000 IEEE MTT-S International Microwave Symposium Digest

published proceedings

  • 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

author list (cited authors)

  • Herrick, K. J., & Katehi, L.

citation count

  • 8

complete list of authors

  • Herrick, KJ||Katehi, LPB

publication date

  • January 2000

publisher