RF W-band wafer-to-wafer transition Conference Paper

abstract

• Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides on vertically stacked silicon wafers. Loss of approximately 0.1 dB is measured for this compact, packaged transition at W-band.

name of conference

• 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

authors

• Katehi, Linda

published proceedings

• 2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3

author list (cited authors)

• Herrick, K. J., & Katehi, L.

citation count

• 8

complete list of authors

• Herrick, KJ||Katehi, LPB

publication date

• January 2000

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium  Journal

keywords

• 0.1 Db
• Circuits
• Conductivity
• Coplanar Waveguides
• Electrical Connection
• Electrical Signals
• Fabrication
• Gold
• Impedance
• Insertion Loss
• Integrated Circuit Interconnections
• Integrated Circuit Packaging
• Mimic
• Multiwafer Designs
• Packaged Transition
• Radio Frequency
• Silicon
• Temperature
• Two-layer Electrical Bond
• Vertically Stacked Wafers
• W-band
• Wafer Bonding
• Wafer-to-wafer Transition

Digital Object Identifier (DOI)

• 10.1109/mwsym.2000.860888

International Standard Book Number (ISBN) 10

• 0-7803-5687-X

start page

• 73

end page

• 76

volume

• 1

URL

• http://dx.doi.org/10.1109/mwsym.2000.860888