MEMS single-pole double-throw (SPDT) X and K-Band switching circuits Conference Paper

abstract

• Single-pole double-throw (SPDT) X and K-band circuit designs incorporating low-loss microelectromechanical shunt capacitive switches are reported. The switches incorporate highly inductive connecting beams which aid in further increasing the isolation at the desired operational RF frequency. Measurements show an isolation of better than 40 dB at both 7 and 20 GHz. Insertion loss was measured at -0.95 dB at 7 GHz and -0.69 dB at 20 GHz for the two respective designs.

name of conference

• 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

authors

• Katehi, Linda

published proceedings

• 2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3

author list (cited authors)

• Pacheco, S. P., Peroulis, D., & Katehi, L.

citation count

• 27

complete list of authors

• Pacheco, SP||Peroulis, D||Katehi, LPB

publication date

• January 2001

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium  Journal

keywords

• 0.69 Db
• 0.95 Db
• 20 Ghz
• 7 Ghz
• Connectors
• Frequency
• Geometry
• Inductive Connecting Beam
• Insertion Loss
• Joining Processes
• K-band
• Mems Single-pole Double-throw Switching Circuit
• Microelectromechanical Shunt Capacitive Switch
• Micromechanical Devices
• Microwave Switches
• Resonance
• Rf Isolation
• Solid State Circuits
• Switches
• Switching Circuits
• X-band

Digital Object Identifier (DOI)

• 10.1109/mwsym.2001.966897

International Standard Book Number (ISBN) 10

• 0-7803-6713-8

start page

• 321

end page

• 324

volume

• 1

URL

• http://dx.doi.org/10.1109/mwsym.2001.966897