MEMS Single-Pole Double-Throw (SPDT) X and K-Band Switching Circuits Conference Paper uri icon

abstract

  • Single-pole double-throw (SPDT) X and K-band circuit designs incorporating low-loss microelectromechanical shunt capacitive switches are reported. The switches incorporate highly inductive connecting beams which aid in further increasing the isolation at the desired operational RF frequency. Measurements show an isolation of better than 40 dB at both 7 and 20 GHz. Insertion loss was measured at -0.95 dB at 7 GHz and -0.69 dB at 20 GHz for the two respective designs.

author list (cited authors)

  • Pachecc, S. P., Peroulis, D., & Katehi, L.

citation count

  • 27

publication date

  • January 2001

publisher