SiGe power heterojunction bipolar transistors (HBT's) fabricated by fully self-aligned double mesa technology Conference Paper

abstract

• Multi-finger SiGe HBT's have been fabricated using a novel fully self-aligned double-mesa technology. With the advanced process technology, a maximum oscillating frequency (f/sub max/) of 78 GHz and a cut-off frequency (f/sub T/) of 37 GHz were demonstrated for a common-emitter device with emitter area of 2/spl times/2/spl times/30 /spl mu/m/sup 2/. For class-A operations, 10-finger devices (A/sub E/=2/spl times/2/spl times/30 /spl mu/m/sup 2/) exhibit an output power of 24.13 dBm with a maximum power added efficiency (PAE) of 26.9% at 8.5 GHz.

name of conference

• 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

authors

• Katehi, Linda

published proceedings

• 2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3

author list (cited authors)

• Lu, L. H., Mohammadi, S., Ma, Z. Q., Ponchak, G. E., Alterovitz, S. A., Strohm, K. M., ... Katehi, L.

citation count

• 4

complete list of authors

• Lu, LH||Mohammadi, S||Ma, ZQ||Ponchak, GE||Alterovitz, SA||Strohm, KM||Luy, JF||Bhattacharya, P||Katehi, LPB

publication date

• January 2001

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium  Journal

keywords

• 2 Micron
• 26.9 Percent
• 30 Micron
• 37 Ghz
• 78 Ghz
• 8.5 Ghz
• Class-a Operations
• Common-emitter Device
• Cut-off Frequency
• Cutoff Frequency
• Emitter Area
• Etching
• Fabrication
• Fingers
• Fully Self-aligned Double Mesa Technology
• Ge-Si Alloys
• Germanium Silicon Alloys
• Gold
• Heterojunction Bipolar Transistors
• Maximum Oscillating Frequency
• Microwave Bipolar Transistors
• Microwave Devices
• Microwave Power Transistors
• Multi-finger Hbts
• Power Added Efficiency
• Power Bipolar Transistors
• Power Heterojunction Bipolar Transistors
• Semiconductor Materials
• Sige
• Silicon Germanium
• Substrates

Digital Object Identifier (DOI)

• 10.1109/mwsym.2001.967235

International Standard Book Number (ISBN) 10

• 0-7803-6713-8

start page

• 1709

end page

• 1712

volume

• 3

URL

• http://dx.doi.org/10.1109/mwsym.2001.967235