SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology Conference Paper uri icon

abstract

  • Multi-finger SiGe HBT's have been fabricated using a novel fully self-aligned double-mesa technology. With the advanced process technology, a maximum oscillating frequency (f/sub max/) of 78 GHz and a cut-off frequency (f/sub T/) of 37 GHz were demonstrated for a common-emitter device with emitter area of 2/spl times/2/spl times/30 /spl mu/m/sup 2/. For class-A operations, 10-finger devices (A/sub E/=2/spl times/2/spl times/30 /spl mu/m/sup 2/) exhibit an output power of 24.13 dBm with a maximum power added efficiency (PAE) of 26.9% at 8.5 GHz.

name of conference

  • 2001 IEEE MTT-S International Microwave Symposium Digest

published proceedings

  • 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

author list (cited authors)

  • Liang-Hung Lu, .., Mohammadi, S., Zhenqiang Ma, .., Ponchak, G. E., Alterovitz, S. A., Strohm, K. M., ... Katehi, L.

citation count

  • 4

complete list of authors

  • Mohammadi, S||Ponchak, GE||Alterovitz, SA||Strohm, KM||Luy, J-F||Bhattacharya, P||Katehi, LPB

publication date

  • January 2001

publisher