SiGe Power Heterojunction Bipolar Transistors (HBT's) Fabricated by Fully Self-Aligned Double Mesa Technology
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Multi-finger SiGe HBT's have been fabricated using a novel fully self-aligned double-mesa technology. With the advanced process technology, a maximum oscillating frequency (f/sub max/) of 78 GHz and a cut-off frequency (f/sub T/) of 37 GHz were demonstrated for a common-emitter device with emitter area of 2/spl times/2/spl times/30 /spl mu/m/sup 2/. For class-A operations, 10-finger devices (A/sub E/=2/spl times/2/spl times/30 /spl mu/m/sup 2/) exhibit an output power of 24.13 dBm with a maximum power added efficiency (PAE) of 26.9% at 8.5 GHz.
author list (cited authors)
Lu, L., Mohammadi, S., Ma, Z., Bhattacharya, P., Katehi, L., Ponchak, G. E., ... Luy, J.