Power performance of X-band Si/Si0.75Ge0.25/Si HBTs Conference Paper uri icon

abstract

  • High performance power SiGe-Si HBTs at X-band (8.4 GHz) frequency have been demonstrated. Under continuous wave operation, a single 10-finger Si-Si/sub 0.75/Ge/sub 0.25/-Si (emitter area of 780 /spl mu/m/sup 2/) HBT, biased at class AB, exhibits 29% peak PAE operating in common-emitter (C-E) mode and 42.1% peak PAE in common-base (C-B) mode with 25.7 dBm and 25 dBm P/sub out/ at peak PAE, respectively. The power gains at peak PAE for C-E and C-B mode operation are 6.1 dB and 7.1 dB, respectively. A 20-finger C-B HBT is capable of delivering 28.45 dBm (700 mW) of RF output power with 25% associated PAE. The peak PAE achieved with 20-finger C-B HBT is 32% with concurrent output power of 27.4 dBm. These represent the state-of-the-art power performance of SiGe-based HBTs. The performance difference between the common-emitter mode and the common-base mode has been analyzed.

name of conference

  • 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)

published proceedings

  • 2001 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS

author list (cited authors)

  • Ma, Z. Q., Mohammadi, S., Bhattacharya, P., Katehi, L., Alterovitz, S. A., & Ponchak, G. E.

citation count

  • 1

complete list of authors

  • Ma, ZQ||Mohammadi, S||Bhattacharya, P||Katehi, LPB||Alterovitz, SA||Ponchak, GE

publication date

  • January 2001