RF W-Band Wafer-to-Wafer Transition Academic Article uri icon

abstract

  • Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides printed on the adjacent faces of two vertically stacked silicon wafers. In addition to serving as a versatile low-temperature thermocompression wafer bond, loss of approximately 0.1 dB is measured for this novel compact packaged wafer-to-wafer transition from 75 to 110 GHz.

published proceedings

  • IEEE Transactions on Microwave Theory and Techniques

author list (cited authors)

  • Herrick, K. J., & Katehi, L.

citation count

  • 9

complete list of authors

  • Herrick, KJ||Katehi, LPB

publication date

  • April 2001