RF W-band wafer-to-wafer transition
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Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides printed on the adjacent faces of two vertically stacked silicon wafers. In addition to serving as a versatile low-temperature thermocompression wafer bond, loss of approximately 0.1 dB is measured for this novel compact packaged wafer-to-wafer transition from 75 to 110 GHz.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
author list (cited authors)
Herrick, K. J., & Katehi, L.
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