3-D integration of RF circuits using Si micromachining Academic Article uri icon

abstract

  • Micromachined silicon integrated circuits have the potential for providing an overarching circuit integration technology that can significantly reduce the size, weight, and cost of microwave and millimeter-wave components. The capability to integrate diverse substrate technologies opens the door for real multifunction chips, combining analog, digital, RF,and optoelectronic functions. This natural approach to three-dimensional (3-D) vertical integration not only can provide higher density circuits, but, by freeing RF circuit design from the tyranny of the two-dimensional (2-D) layout, can reach levels of performance not possible in a planar geometry. This article focuses on the concept of 3-D circuit integration using silicon (Si) bulk micromachining; however, similar techniques can be applied in any other III-V substrate material. Packaging issues prerequisite for the 3-D integration and component development that led to the capabilities for 3-D integration are discussed. The integration techniques are applied to a 3-D integrated W-band power cube, which provides a vehicle for successfully demonstrating the concept and basic techniques for 3-D integration. A concept study is presented of the use of micromachining to integrate Ka-band 2-D and 3-D corporate power combining architectures.

altmetric score

  • 6

author list (cited authors)

  • Katehi, L., Harvey, J. F., & Herrick, K. J.

citation count

  • 21

publication date

  • March 2001