An X-band high-power amplifier using SiGe/Si HBT and lumped passive components Academic Article

abstract

• We report the design and fabrication of a compact microwave monolithic integrated circuit (MMIC) amplifier, which demonstrates high output power at X-Band. A single-stage power amplifier is demonstrated, with a double-mesa type SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an output power at peak efficiency of 23 dBm, and a saturated output power P/sub sat/ of 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs.

authors

• Katehi, Linda

published proceedings

• IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

author list (cited authors)

• Ma, Z. Q., Mohammadi, S., Lu, L. H., Bhattacharya, P., Katehi, L., Alterovitz, S. A., & Ponchak, G. E.

citation count

• 6

complete list of authors

• Ma, ZQ||Mohammadi, S||Lu, LH||Bhattacharya, P||Katehi, LPB||Alterovitz, SA||Ponchak, GE

publication date

• July 2001

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Microwave and Wireless Components Letters  Journal

keywords

• Lumped Passives
• Mmic Power Amplifier
• Sige/si Hbt

Digital Object Identifier (DOI)

• 10.1109/7260.933773

start page

• 287

end page

• 289

volume

• 11

issue

• 7

URL

• http://dx.doi.org/10.1109/7260.933773