SiGe/Si Power HBTs for X- to K-Band Applications Conference Paper uri icon


  • High performance power SiGe/Si HBTs at X-band (8.4 GHz), Ku-band (12.6 GHz) and K-band (18 GHz) have been demonstrated. Under continuous wave operation, a single 20-finger Si/Si/sub 0.75/Ge/sub 0.25//Si (emitter area of 1200 /spl mu/m/sup 2/) HBT, biased in class AB, delivers 28.5 dBm (700 mW) of RF output power at X-band, 25.5 dBm (350 mW) at Ku-band and 22.5 dBm (180 mW) at K-band. These represent the state-of-the-art power performance of SiGe-based HBTs at frequencies above X-band. An in-depth analysis of the power performance of HBTs with different geometry and configuration is also presented, which will eventually serve as a design guide for SiGe/Si power HBTs at different operating frequencies.

name of conference

  • 2002 International Microwave Symposium (MTT 2002)

published proceedings

  • 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)

author list (cited authors)

  • Mohammadi, S., Zhenqiang Ma, .., Jaehoon Park, .., Bhattacharya, P., Katehi, L., Ponchak, G. E., ... Luy, J.

citation count

  • 5

complete list of authors

  • Mohammadi, S||Bhattacharya, P||Katehi, LPB||Ponchak, GE||Alterovitz, SA||Strohm, KM||Luy, J-F

publication date

  • January 2002