155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators Academic Article uri icon


  • We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 /spl mu/m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.<>

published proceedings

  • IEEE Transactions on Microwave Theory and Techniques

altmetric score

  • 3

author list (cited authors)

  • Rosenbaum, S. E., Kormanyos, B. K., Jelloian, L. M., Matloubian, M., Brown, A. S., Larson, L. E., ... Rebeiz, G. M.

citation count

  • 50

complete list of authors

  • Rosenbaum, SE||Kormanyos, BK||Jelloian, LM||Matloubian, M||Brown, AS||Larson, LE||Nguyen, LD||Thompson, MA||Katehi, LPB||Rebeiz, GM

publication date

  • April 1995