155-GHZ AND 213-GHZ ALINAS/GAINAS/INP HEMT MMIC OSCILLATORS Academic Article

abstract

• We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 /spl mu/m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.<>

authors

• Katehi, Linda

published proceedings

• IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

altmetric score

• 3

author list (cited authors)

• ROSENBAUM, S. E., KORMANYOS, B. K., JELLOIAN, L. M., MATLOUBIAN, M., BROWN, A. S., LARSON, L. E., ... REBEIZ, G. M.

citation count

• 50

complete list of authors

• ROSENBAUM, SE||KORMANYOS, BK||JELLOIAN, LM||MATLOUBIAN, M||BROWN, AS||LARSON, LE||NGUYEN, LD||THOMPSON, MA||KATEHI, LPB||REBEIZ, GM

publication date

• April 1995

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Transactions on Microwave Theory and Techniques  Journal

keywords

• 0.25 Micron
• 155 Ghz
• 213 Ghz
• 50 Nm
• Alinas-gainas-inp
• Aluminium Compounds
• Drain-source Spacing
• Electron Beam Lithography
• Fabrication
• Gallium Arsenide
• Gate Lengths
• Hemt Integrated Circuits
• Hemt Mmic Oscillators
• Hemts
• Iii-v Semiconductors
• Indium Compounds
• Indium Phosphide
• Integrated Circuit Technology
• Millimeter Wave Integrated Circuits
• Millimeter Wave Technology
• Mmic Oscillators
• Mmics
• Molecular Beam Epitaxial Growth
• Multiterminal Networks
• Oscillators
• Planar Antennas
• Quasi-optical Oscillators
• Self-aligned Sub-tenth-micrometer Electron-beam Techniques
• Sheet Charge
• Silicon
• Space Technology
• Three-terminal Oscillators

Digital Object Identifier (DOI)

• 10.1109/22.375256

start page

• 927

end page

• 932

volume

• 43

issue

• 4

URL

• http://dx.doi.org/10.1109/22.375256