155-GHZ AND 213-GHZ ALINAS/GAINAS/INP HEMT MMIC OSCILLATORS
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abstract
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 /spl mu/m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.<>
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
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author list (cited authors)
ROSENBAUM, S. E., KORMANYOS, B. K., JELLOIAN, L. M., MATLOUBIAN, M., BROWN, A. S., LARSON, L. E., ... REBEIZ, G. M.