Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers Conference Paper uri icon

abstract

  • The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si heterojunction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit f/sub max/ of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at /spl lambda/=850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dB/spl Omega/ and 47.4 dB/spl Omega/, respectively. Monolithically integrated single-feedback PIN-HBT photoreceivers were implemented and the bandwidth was measured to be /spl sim/0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

name of conference

  • Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97

published proceedings

  • IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS

altmetric score

  • 3

author list (cited authors)

  • Rieh, J. S., Qasaimeh, O., Klotzkin, D., Lu, L. H., Yang, K., Katehi, L., Bhattacharya, P., & Croke, E. T.

citation count

  • 3

complete list of authors

  • Rieh, JS||Qasaimeh, O||Klotzkin, D||Lu, LH||Yang, K||Katehi, LPB||Bhattacharya, P||Croke, ET

publication date

  • January 1997