A Si micromachined conformal package for a K-band low noise HEMT amplifier Conference Paper uri icon

abstract

  • A 20 GHz low noise HEMT amplifier is fabricated and tested to demonstrate the application of integrated conformal packaging to MMIC circuit design. Si micromachining is employed to create a conformal shielding cavity for the low noise amplifier, which uses a flip chip InP HEMT. The packaged amplifier demonstrates 5 dB insertion gain at 20 GHz, with performance that closely matches simulations of an ideal line circuit. The results show that Si micromachining can be performed to integrate packaging with circuit design, and that MMICs can be fabricated on Si substrates by using discrete flip-chip devices.

name of conference

  • 1997 IEEE MTT-S International Microwave Symposium Digest

published proceedings

  • 1997 IEEE MTT-S International Microwave Symposium Digest

author list (cited authors)

  • Robertson, S. V., Matloubian, M., Case, M., & Katehi, L.

citation count

  • 6

complete list of authors

  • Robertson, SV||Matloubian, M||Case, M||Katehi, LPB

publication date

  • January 1997

publisher