Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology Academic Article

abstract

• Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dB/spl Omega/ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dB/spl Omega/ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.

authors

• Katehi, Linda

published proceedings

• IEEE MICROWAVE AND GUIDED WAVE LETTERS

author list (cited authors)

• Rieh, J. S., Qasaimeh, O., Lu, L. H., Yang, K., Katehi, L., Bhattacharya, P., & Croke, E. T.

citation count

• 4

complete list of authors

• Rieh, JS||Qasaimeh, O||Lu, LH||Yang, K||Katehi, LPB||Bhattacharya, P||Croke, ET

publication date

• February 1998

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Microwave and Wireless Components Letters  Journal

keywords

• Feedback
• Fiber Optical Communication
• Heterojunction Bipolar Transistor (hbt)
• Sige

Digital Object Identifier (DOI)

• 10.1109/75.658642

start page

• 63

end page

• 65

volume

• 8

issue

• 2

URL

• http://dx.doi.org/10.1109/75.658642