Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers Academic Article uri icon

abstract

  • Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with f/sub T/=23 GHz and f/sub max/=34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at /spl lambda/=850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB./spl Omega/ and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

published proceedings

  • IEEE Photonics Technology Letters

altmetric score

  • 3

author list (cited authors)

  • Rieh, J., Klotzkin, D., Qasaimeh, O., Lu, L., Yang, K., Katehi, L., Bhattacharya, P., & Croke, E. T.

citation count

  • 15

complete list of authors

  • Rieh, J-S||Klotzkin, D||Qasaimeh, O||Lu, L-H||Yang, K||Katehi, LPB||Bhattacharya, P||Croke, ET

publication date

  • March 1998