Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers Academic Article

abstract

• Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with f/sub T/=23 GHz and f/sub max/=34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at /spl lambda/=850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB./spl Omega/ and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

authors

• Katehi, Linda

published proceedings

• IEEE PHOTONICS TECHNOLOGY LETTERS

altmetric score

• 3

author list (cited authors)

• Rieh, J. S., Klotzkin, D., Qasaimeh, Q., Lu, L. H., Yang, K., Katehi, L., Bhattacharya, P., & Croke, E. T.

citation count

• 14

complete list of authors

• Rieh, JS||Klotzkin, D||Qasaimeh, Q||Lu, LH||Yang, K||Katehi, LPB||Bhattacharya, P||Croke, ET

publication date

• March 1998

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Photonics Technology Letters  Journal

keywords

• Monolithic Integration
• Photoreceivers
• Sige

Digital Object Identifier (DOI)

• 10.1109/68.661428

start page

• 415

end page

• 417

volume

• 10

issue

• 3

URL

• http://dx.doi.org/10.1109/68.661428