K-band Si/SiGe HBT MMIC amplifiers using lumped passive components with a micromachined structure. Conference Paper

abstract

• Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92/spl times/0.67 mm/sup 2/.

name of conference

• 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182)

authors

• Katehi, Linda

published proceedings

• 1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM

author list (cited authors)

• Lu, L. H., Rieh, J. S., Bhattacharya, P., Katehi, L., Croke, E. T., Ponchak, G. E., & Alterovitz, S. A.

citation count

• 3

complete list of authors

• Lu, LH||Rieh, JS||Bhattacharya, P||Katehi, LPB||Croke, ET||Ponchak, GE||Alterovitz, SA

publication date

• January 1998

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium  Journal

keywords

• 40 Engineering
• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1109/RFIC.1998.682038

International Standard Book Number (ISBN) 10

• 0-7803-4439-1

start page

• 17

end page

• 20

URL

• http://dx.doi.org/10.1109/rfic.1998.682038