A wideband CPW-to-microstrip transition for millimeter-wave packaging Conference Paper uri icon

abstract

  • A broadband single layer vertical transition from CPW to microstrip has been developed for multilayer millimeter-wave circuits. The transition has exceptionally wide bandwidth and presents low insertion and return losses. A transition has been fabricated on a 100 /spl mu/m silicon wafer that shows approximately 0.3 dB of insertion loss and better than 10 dB return loss over 75-110 GHz. This transition can be used for the vertical integration of multi-layer millimeter wave circuits and packaging.

name of conference

  • 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)

published proceedings

  • 1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4

author list (cited authors)

  • Ellis, T. J., Raskin, J. P., Katehi, L., & Rebeiz, G. M.

citation count

  • 20

complete list of authors

  • Ellis, TJ||Raskin, JP||Katehi, LPB||Rebeiz, GM

publication date

  • January 1999