Damping of crystallization waves at the solid-liquid interface of helium. Academic Article uri icon


  • The low-temperature behavior of He4 crystallization waves has been studied from 0.03 to 0.5 K. From the damping of these waves we have determined the interfacial growth resistance, (Km)-1. At the lowest temperatures, (Km)-1 is consistent with the assumption that the growth velocity is limted by the scattering of ballistic phonons by the moving interface. Above T 0.25 K, (Km)-1 increases more slowly with temperature, indicating a decrease in the phonon contribution from that observed at lower temperatures. 1992 The American Physical Society.

published proceedings

  • Phys Rev Lett

author list (cited authors)

  • Wang, C. L., & Agnolet, G.

citation count

  • 17

complete list of authors

  • Wang, CL||Agnolet, G

publication date

  • October 1992