Damping of crystallization waves at the solid-liquid interface of helium.
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The low-temperature behavior of He4 crystallization waves has been studied from 0.03 to 0.5 K. From the damping of these waves we have determined the interfacial growth resistance, (Km)-1. At the lowest temperatures, (Km)-1 is consistent with the assumption that the growth velocity is limted by the scattering of ballistic phonons by the moving interface. Above T 0.25 K, (Km)-1 increases more slowly with temperature, indicating a decrease in the phonon contribution from that observed at lower temperatures. 1992 The American Physical Society.