MOLECULAR-DYNAMICS STUDIES OF CHEMICAL-REACTIONS AT SEMICONDUCTOR SURFACES
Overview
Identity
Additional Document Info
Other
View All
Overview
abstract
We have performed molecular dynamics simulations for O, C, and N atoms released at the GaAs(110) surface, and have observed the formation of CO, NO, and N2. In most cases these molecules formed under the surface. This formation was accompanied by a disruption of the GaAs bonds. In those cases where CO, NO, and N2 formed above the surface, the energy was found to be higher, and bond disruption was minimal. 1988.