Molecular dynamic studies of chemical reactions at semiconductor surfaces
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We have performed molecular dynamics simulations for O, C, and N atoms released at the GaAs(110) surface, and have observed the formation of CO, NO, and N2. In most cases these molecules formed under the surface. This formation was accompanied by a disruption of the GaAs bonds. In those cases where CO, NO, and N2 formed above the surface, the energy was found to be higher, and bond disruption was minimal. © 1988.
author list (cited authors)
Menon, M., & Allen, R. E.