SURFACE ELECTRONIC STATES IN GAAS1-XPX Academic Article

abstract

• The intrinsic electronic surface states of (110) GaAs 1-x P x are predicted as functions of alloy composition x. For x > x c 0.05, intrinsic states are found within the fundamental gap. The minimum energy of the surface band is primarily determined by the bulk electronic structure, not by the atomic relaxation at the surface. 1981.

authors

• Allen, Roland

published proceedings

• SURFACE SCIENCE

author list (cited authors)

• ALLEN, R. E., HJALMARSON, H. P., & DOW, J. D.

citation count

• 1

complete list of authors

• ALLEN, RE||HJALMARSON, HP||DOW, JD

publication date

• October 1981

publisher

• Elsevier  Publisher

published in

• Surface Science  Journal

Digital Object Identifier (DOI)

• 10.1016/0167-2584(81)90472-2

start page

• L625

end page

• L629

volume

• 110

issue

• 2

URL

• http://dx.doi.org/10.1016/0167-2584(81)90472-2