Surface electronic states in GaAs1−xPx
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The intrinsic electronic surface states of (110) GaAs 1-x P x are predicted as functions of alloy composition x. For x > x c ≈ 0.05, intrinsic states are found within the fundamental gap. The minimum energy of the surface band is primarily determined by the bulk electronic structure, not by the atomic relaxation at the surface. © 1981.
author list (cited authors)
Allen, R. E., Hjalmarson, H. P., & Dow, J. D.