DEPENDENCE OF THE GAAS (110) SURFACE ELECTRONIC STATE DISPERSION-CURVES ON THE SURFACE RELAXATION ANGLE Academic Article

abstract

• The surface state dispersion curves E(k) of the dangling bond states near the fundamental band gap, C3 and A5, are computed for both the established {reversed tilde equals}27 model and the recently proposed {reversed tilde equals}7 model of the (110) surface relaxation of GaAs, where is the surface bond rotation angle. The two models produce surface state dispersion curves that are similar to one another and to the data. 1985.

authors

• Allen, Roland

published proceedings

• SUPERLATTICES AND MICROSTRUCTURES

author list (cited authors)

• FROELICH, D. V., LAPEYRE, M. E., DOW, J. D., & ALLEN, R. E.

citation count

• 11

complete list of authors

• FROELICH, DV||LAPEYRE, ME||DOW, JD||ALLEN, RE

publication date

• January 1985

publisher

• Elsevier  Publisher

published in

• Superlattices and Microstructures  Journal

Digital Object Identifier (DOI)

• 10.1016/0749-6036(85)90034-5

start page

• 87

end page

• 89

volume

• 1

issue

• 1

URL

• http://dx.doi.org/10.1016/0749-6036(85)90034-5