Dependence of the GaAs (110) surface electronic state dispersion curves on the surface relaxation angle Academic Article uri icon

abstract

  • The surface state dispersion curves E(k) of the dangling bond states near the fundamental band gap, C3 and A5, are computed for both the established θ{reversed tilde equals}27° model and the recently proposed θ{reversed tilde equals}7° model of the (110) surface relaxation of GaAs, where θ is the surface bond rotation angle. The two models produce surface state dispersion curves that are similar to one another and to the data. © 1985.

author list (cited authors)

  • Froelich, D. V., Lapeyre, M. E., Dow, J. D., & Allen, R. E.

citation count

  • 11

publication date

  • January 1985