Intrinsic interface states as extended deep traps: Ge/GaP and Si/GaP
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Electronic interface state dispersion curves E(k̄) are predicted for (110) Ge/GaP and Si/GaP interfaces, and are found to overlap the mutual fundamental band gaps. Such bound interface states can act as extended deep traps.
author list (cited authors)
Buisson, J. P., Kykta, M. P., Dow, J. D., Beres, R. P., & Allen, R. E.