Intrinsic interface states as extended deep traps: Ge/GaP and Si/GaP Academic Article uri icon

abstract

  • Electronic interface state dispersion curves E(k̄) are predicted for (110) Ge/GaP and Si/GaP interfaces, and are found to overlap the mutual fundamental band gaps. Such bound interface states can act as extended deep traps.

author list (cited authors)

  • Buisson, J. P., Kykta, M. P., Dow, J. D., Beres, R. P., & Allen, R. E.

citation count

  • 0

publication date

  • July 1983