INTRINSIC INTERFACE STATES AS EXTENDED DEEP TRAPS - GE/GAP AND SI/GAP Academic Article

abstract

• Electronic interface state dispersion curves E(k) are predicted for (110) Ge/GaP and Si/GaP interfaces, and are found to overlap the mutual fundamental band gaps. Such bound interface states can act as extended deep traps.

authors

• Allen, Roland

published proceedings

• JOURNAL OF APPLIED PHYSICS

author list (cited authors)

• BUISSON, J. P., KYKTA, M. P., DOW, J. D., BERES, R. P., & ALLEN, R. E.

citation count

• 0

complete list of authors

• BUISSON, JP||KYKTA, MP||DOW, JD||BERES, RP||ALLEN, RE

publication date

• July 1983

publisher

• AIP Publishing  Publisher

published in

• Journal of Applied Physics  Journal

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1063/1.332522

start page

• 4221

end page

• 4222

volume

• 54

issue

• 7

URL

• http://dx.doi.org/10.1063/1.332522